Drift-Diffusion and Ballistic Transport Modeling in III-Nitride Multiple-QW Light Emitting Structures
نویسندگان
چکیده
We present the first attempt of charge carrier transport modeling in III-nitride multipleQW light-emitting diode structures which takes into consideration ballistic overshoot of the device active region. For the purpose of this study, the drift-diffusion based Transport module of our software package has been complemented by a simple model of ballistic carrier transport which proved to be essential for device output characteristics. We demonstrate strong inhomogeneity of the carrier injection into optically active quantum wells of polar and nonpolar III-nitride structures and show that carrier leakage is dominated by ballistic overshoot of the device .active region
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